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Сибирский государственный университет
науки и технологий имени академика М.Ф. Решетнева

Сибирский аэрокосмический журнал
ISSN 2712-8970 (Print) ISSN 2782-5760 (on-line)

Сведения об образовательной организации

UDK 539.21:537.86 Doi: 10.31772/2587-6066-2020-21-2-254-265
CHANGE IN MAGNETORESISTANCE IN MANGANESE CHALCOGENIDES MnSe1-XTeX FROM BULK TO THIN-FILM SAMPLES
S. S. Aplesnin, K. I. Yanushkivich
Reshetnev Siberian State University of Science and Technology; 31, Krasnoyarskii rabochii prospekt, Krasnoyarsk, 660037, Russian Federation Scientific-Practical Materials Research Center NAS of Belarus; 19, Brovki St., Minsk, 220072, Belarus
The electrical and optical properties of anion-substituted antiferromagnetic semiconductors MnSe1-ХTeХ (0.1 ≤ X ≤ 0.4) in the temperature range 77-300 K and magnetic fields up to 13 kOe in bulk samples and in poly-crystalline thin films are investigated. Negative magnetoresistance was found in the MnSe1-XTeX solution in the neighbourhood with a Néel temperature for X = 0.1 and for a composition with X = 0.2 in the paramagnetic re-gion up to 270 K. A correlation was established between the spin-glass state and magnetoresistance for X = 0, 1 and 0.2. The opti-cal absorption spectra were measured in the frequency range 2000 cm-1 < ω < 12000 cm-1. A decrease in the gap in the spectrum of electronic excitations and a several of absorption peaks near the bottom of the conduc-tion band were found. Coexistence of two crystalline phases was found in polycrystalline films of the MnSe1-XTeX system by X-ray diffraction analysis. Resistance maxima were established in the region of polymorphic and magnetic transitions. A model of localized spin-polarized electrons with a localization radius varying in a magnetic field as a result of competition between ferromagnetic and antiferromagnetic interactions is proposed. In the paramagnetic region, negative magnetoresistance is caused by tunneling of spin-polarized electrons during orbital ordering.
Keywords: manganese chalcogenides, magnetoresistance, conductivity, thin films, current-voltage curve.
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Aplesnin Sergey Stepanovich – D. Sc., Professor; Reshetnev Siberian State University of Science and Technology.
E-mail: aplesnin@sibsau.ru.
Yanushkevich Kazimir Iosifovich – D. Sc., Head of the Lab Magnetic Materials, GO “SPC NAS of Belarus on
Material Science”. E-mail: kazimir@mail.ru.  


  CHANGE IN MAGNETORESISTANCE IN MANGANESE CHALCOGENIDES MnSe1-XTeX FROM BULK TO THIN-FILM SAMPLES