Научная электронная библиотека ULRICH'S Periodicals Directory

Сибирский государственный университет
науки и технологий имени академика М.Ф. Решетнева

Сибирский аэрокосмический журнал
ISSN 2712-8970 (Print) ISSN 2782-5760 (on-line)

Сведения об образовательной организации

UDK 621.383 DoI: 10.31772/2587-6066-2018-19-1-137-145
INFLUENCE OF THE In/Ga RELATION IN THE GAS PHASE ON THE CHARACTERISTICS OF THE InXGa1-XP EPITAXIAL LAYERS OF CASCADE SOLAR CELLS
A. A. Naumova1*, A. A. Lebedev1, 2, B. V. Zhalnin1, E. V. Slyshchenko1, 2, N. T. Vagapova1
1JSC “Research-production enterprise “Kvant” 16, 3-rd Mytish chinskaya, Moscow, 129626, Russian Federation 2The National University of Science and Technology “MISiS” 4, Leninsky Av., Moscow, 119049, Russian Federation *E-mail: otdel_17@npp.kvant.ru
The modern solar arrays for the most spacecrafts consists of solar cells which are formed by the thirty nano- and micro-dimensional epitaxial layers based on AIIIBV materials forming triple junction InGaP / InGaAs / Ge. This article presents the results of a study of experimental samples of thin single-crystal epitaxial InxGa1-xP layers with different indium and gallium concentrations (x = 38 to 53 %) that were grown on Ge – substrate by MOCVD industrial equipment. The theme of present investigation is the influence of epitaxial growth parameters on the crystal structure characteristics. The ratio of the components of the third group in the gas phase were calculated from the specified technological parameters. The rocking curves obtained by high-resolution two-crystal X-ray diffractometry were investigated. The lattice parameter and the ratio of indium to gallium in the solid phase were calculated. A high perfection of a singlecrystal structure with an insignificant broadening of the X-ray diffraction peaks was observed in the range from 45 to 53 %. It is shown that the broadening of the diffraction peak of the structure can be the criterion of estimation of the quality of the grown structure in addition to the mismatch of diffraction maximum. Also the In / (In + Ga) ratio in the solid phase was calculated using the method of photoluminescence effect measuring. It was shown in comparison of data of x-ray diffraction with photoluminescence method the composition determination by photoluminescence method should be considered only as estimated.
solar cell, solar battery, epitaxial layer, gas-phase epitaxy, photoelectric converter, X-ray diffractometry, photoluminescence, AIIIBV, semiconductor structure.
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Naumova Anastasia Alexandrovna – researcher, JSC “Research and Production Enterprise “Kvant”. E-mail:

otdel_17@kvant.ru.

Lebedev Andrey Alexandrovich – senior research scientist, JSC “Research and Production Enterprise “Kvant”;

the 2nd category engineer, Department of Physical Chemistry, National Research Technological University “MISIS”.

E-mail: otdel_17@kvant.ru.

Zhalnin Boris Viktorovich – Cand. Sc., head of department, JSC “Research and Production Enterprise “Kvant”.

E-mail: otdel_17@kvant.ru.

Slyshchenko Evgeny Vitalievich – vice-head of the department, JSC “Research and Production Enterprise

“Kvant”; the 1st category engineer of Department of Nanostructured energy converters, National Research

Technological University “MISIS”. E-mail: otdel_17@kvant.ru.

Vagapova Nargiza Tukhtamyshevna – Cand. Sc., leading researcher, JSC “Research and Production Enterprise

“Kvant”. E-mail: otdel_17@kvant.ru.


  INFLUENCE OF THE In/Ga RELATION IN THE GAS PHASE ON THE CHARACTERISTICS OF THE InXGa1-XP EPITAXIAL LAYERS OF CASCADE SOLAR CELLS